Low‐Symmetry 2D t‐InTe for Polarization‐Sensitive UV‐Vis‐NIR Photodetection
Published in Small, 2024, 20(40), 2400311, 2024
Polarization‐sensitive photodetection grounded on low‐symmetry 2D materials has great potential for intelligent sensing and multidimensional visual perception. Here, 2D t-InTe crystals are introduced to realize UV–Vis–NIR broadband response together with a high anisotropy ratio in polarized photodetection, benefiting from a narrow band gap and intrinsically low-symmetry lattice.
Recommended citation: Nan Zhou, Ziwei Dang, Haoran Li, Zongdong Sun, Shijie Deng, Junhao Li, Xiaobo Li, Xiaoxia Bai, Yong Xie, Liang Li, Tianyou Zhai. (2024). "Low‐Symmetry 2D t‐InTe for Polarization‐Sensitive UV‐Vis‐NIR Photodetection." Small, 20(40), 2400311.
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